Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

Temperature Sensor employing Ring Oscillator composed of Poly-Si Thin-Film Transistors: Comparison between Lightly-Doped and Offset Drain Structures

We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is conf...

The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors

0026-2714/$ see front matter 2011 Elsevier Ltd. A doi:10.1016/j.microrel.2011.08.009 ⇑ Corresponding author. Tel.: +82 31 290 7139; fax E-mail address: [email protected] (J. Yi). Low temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) have a high carrier mobility that enables the design of small devices that offer large currents and fast switching speeds. However, the elec...

Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of polycrystalline-Si thin-film transistors

Effects of a lightly-doped-drain (LDD) implantation condition on the device characteristics of poly-Si TFT have been studied. For a LDD implantation dose of 2–4 × 1013 cm−2, no significantly large difference in on-state current and off-state leakage is found. For a LDD implantation energy of 50–100 keV, however, the higher LDD implantation energy results in smaller off-state leakage and more re...

Near-infrared femtosecond laser crystallized poly-Si thin film transistors.

Polycrystalline silicon (poly-Si) thin film transistors (TFTs) fabricated by near-infrared femtosecond laser annealing (FLA) are demonstrated. The FLA-annealed poly-Si channels exhibit low tail-state, deep-state, and midgap-state densities of grain traps. Characteristics such as field-effect mobility, threshold voltage, and subthreshold slope for FLA-annealed poly-TFTs are comparable to those o...

Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel